首页> 外国专利> METHOD FOR MANUFACTURING ARTIFICIAL OLFACTORY SYSTEM AND ARTIFICIAL OLFACTORY SYSTEM

METHOD FOR MANUFACTURING ARTIFICIAL OLFACTORY SYSTEM AND ARTIFICIAL OLFACTORY SYSTEM

机译:制造人工嗅觉系统和人工嗅觉系统的方法

摘要

Disclosed are a method for manufacturing an artificial olfactory system and an artificial olfactory system. The method comprises: transferring a sensor pattern to a piece of copper foil and photoetching pattern by means of a photoetching technique (S1); performing first etching to fabricate a sensing unit (S2); dissolving a photoresist (S3); pouring out polydimethylsiloxane, curing same, and after curing is completed, stripping the polydimethylsiloxane and the copper foil from a preset silicon plate (S4); performing second etching on the polydimethylsiloxane and the copper foil, so as to provide a space for a sensing material and a friction process (S5); uniformly synthesizing a layer of a polypyrrole derivative on the surface of the copper foil by means of an electrochemical method (S6); and evaporating a layer of copper on the polydimethylsiloxane as a sensing electrode using an electron beam evaporation coating technique (S7). By simulating the olfactory system of a mammal on the basis of the principle of friction power generation and the function of olfactory receptors, the recognition of different gas molecules is achieved. The present invention can generate electricity by itself without connecting to an external power supply, has a small volume and is easy to carry, can detect poisonous and harmful gases at any time and any place, and is applied in clinical practice.
机译:公开了一种制造人工嗅觉系统和人工嗅觉系统的方法。该方法包括:通过光刻技术将传感器图案转移到一块铜箔和光刻图案;执行第一蚀刻以制造传感单元(S2);溶解光致抗蚀剂(S3);浇注聚二甲基硅氧烷,固化,并完成固化后,从预设的硅板剥离聚二甲基硅氧烷和铜箔;在聚二甲基硅氧烷和铜箔上进行第二蚀刻,以便为感测材料和摩擦过程提供空间(S5);通过电化学方法(S6)均匀地在铜箔表面上均匀地合成聚吡咯衍生物;使用电子束蒸发涂布技术(S7)作为感测电极将一层铜蒸发在聚二甲基硅氧烷上。通过在摩擦发电原理和嗅觉受体的函数的基础上模拟哺乳动物的嗅觉系统,实现了不同气体分子的识别。本发明可以通过本身产生电力而不连接外部电源,具有较小的体积并且易于携带,可以在任何时间和任何地方检测有毒和有害气体,并应用于临床实践中。

著录项

  • 公开/公告号WO2021163998A1

    专利类型

  • 公开/公告日2021-08-26

    原文格式PDF

  • 申请/专利权人 SHENZHEN INSTITUTES OF ADVANCED TECHNOLOGY;

    申请/专利号WO2020CN76187

  • 发明设计人 LV DAN;ZHAN YANG;

    申请日2020-02-21

  • 分类号G01N27/48;H02N1/04;

  • 国家 CN

  • 入库时间 2022-08-24 20:50:39

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