Stacked monolithic upright metamorphic III-V multi-junction solar cell

摘要

Stacked monolithic multiple solar cell having a first sub-cell with a first band gap and a first lattice constant, a second sub-cell arranged below the first sub-cell with a second, larger band gap and a second lattice constant, with a first tunnel diode with a p + layer between the first and second sub-cells is arranged with a third lattice constant and an n + layer with a fourth lattice constant, the second and fourth lattice constants are each equal to the first lattice constant, the first sub-cell, the second sub-cell and the first tunnel diode each have at least one element of III. Main group and at least one element of main group V, which has the p + layer (Ga) AlInAs or consists of (Ga) AlInAs, the p + layer based on the elements of III. Main group has a gallium content of less than 10%, the third lattice constant of the p + layer is less than or equal to the lattice constant of the first sub-cell.