Power semiconductor device, rotating electric machine including same, and method of manufacturing power semiconductor device

摘要

A power semiconductor device includes a planar rectifying element, a base electrode, a first solder layer, a lead electrode, a second solder layer, and first and second sealing portions. The base electrode is electrically connected to the rectifying element via the first solder layer formed on a first surface of the rectifying element. The lead electrode is electrically connected to the rectifying element via the second solder layer formed on a second surface of the rectifying element. The first sealing portion is formed of a first resin and provided in a recess; the recess is formed by the first surface of the rectifying element and the first solder layer or by the second surface of the rectifying element and the second solder layer. The second sealing portion is formed of a second resin and separately from the first sealing portion to cover an outer surface of the first sealing portion.