首页> 外国专利> POWER SEMICONDUCTOR DEVICE, ROTATING ELECTRIC MACHINE INCLUDING SAME, AND METHOD OF MANUFACTURING POWER SEMICONDUCTOR DEVICE

POWER SEMICONDUCTOR DEVICE, ROTATING ELECTRIC MACHINE INCLUDING SAME, AND METHOD OF MANUFACTURING POWER SEMICONDUCTOR DEVICE

机译:功率半导体装置,包括其的旋转电机以及制造功率半导体装置的方法

摘要

A power semiconductor device includes a planar rectifying element, a base electrode, a first solder layer, a lead electrode, a second solder layer, and first and second sealing portions. The base electrode is electrically connected to the rectifying element via the first solder layer formed on a first surface of the rectifying element. The lead electrode is electrically connected to the rectifying element via the second solder layer formed on a second surface of the rectifying element. The first sealing portion is formed of a first resin and provided in a recess; the recess is formed by the first surface of the rectifying element and the first solder layer or by the second surface of the rectifying element and the second solder layer. The second sealing portion is formed of a second resin and separately from the first sealing portion to cover an outer surface of the first sealing portion.
机译:功率半导体器件包括平面整流元件,基极,第一焊料层,引线电极,第二焊料层以及第一和第二密封部分。基底电极经由形成在整流元件的第一表面上的第一焊料层电连接至整流元件。引线电极经由形成在整流元件的第二表面上的第二焊料层电连接至整流元件。第一密封部由第一树脂形成并设置在凹部中。所述凹口由所述整流元件的第一表面和所述第一焊料层形成,或者由所述整流元件的第二表面和所述第二焊料层形成。第二密封部分由第二树脂形成并且与第一密封部分分开以覆盖第一密封部分的外表面。

著录项

  • 公开/公告号US2019287871A1

    专利类型

  • 公开/公告日2019-09-19

    原文格式PDF

  • 申请/专利权人 DENSO CORPORATION;

    申请/专利号US201916356107

  • 发明设计人 SHOU HASEGAWA;

    申请日2019-03-18

  • 分类号H01L23/31;H01L23/482;H01L21/56;H01L23/367;H02K11/33;

  • 国家 US

  • 入库时间 2022-08-21 12:11:50

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