CREATING ARBITRARY PATTERNS ON A 2-D UNIFORM GRID VCSEL ARRAY

摘要

The optoelectronic device includes a semiconductor substrate 10 and an array of optoelectronic cells 12 formed on the semiconductor substrate. The cells include first epitaxial layers defining a bottom distributed Bragg-reflector (DBR) stack 20 ; second epitaxial layers formed over the lower DBR stack and defining a quantum well structure (22); third epitaxial layers formed over the quantum well structure and defining an upper DBR stack (24); and electrodes 30 formed over the top DBR stack configurable to inject an excitation current into the quantum well structure of each optoelectronic cell. The first set of optoelectronic cells is configured to emit laser radiation in response to the excitation current. In a second set 16 of optoelectronic cells interleaved with the first set, at least one element of the optoelectronic cells, selected from among epitaxial layers and electrodes, is configured such that the optoelectronic cells in the second set do not emit laser radiation.