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Film Structure for Electric Field Induced Photoresist Patterning Process

机译:电场诱导光致抗蚀剂图案化工艺薄膜结构

摘要

Methods and apparatus are provided for minimizing line edge/width roughness in lines formed by photolithography. In one example, a method of processing a substrate comprises applying a photoresist layer comprising a photoacid generator on a multilayer disposed on the substrate, the multilayer comprising: an organic material, an inorganic material, or an organic material; an underlying layer formed of a mixture of inorganic materials, wherein in a lithographic exposure process exposing a first portion of the photoresist layer not protected by the photomask to radiant light, and in a substantially vertical direction, generated from the photoacid generator and applying an electric or magnetic field to alter the movement of the mine.
机译:提供了用于最小化通过光刻形成的线的线边缘/宽度粗糙度最小化方法和装置。 在一个示例中,处理衬底的方法包括施加光致抗蚀剂层,该光致抗蚀剂层在设置在基板上的多层上,多层包括:有机材料,无机材料或有机材料; 由无机材料的混合物形成的底层层,其中在光刻曝光过程中,在光致掩抗层的第一部分暴露于由光掩模保护的光致抗蚀剂层和辐射光线,并且在基本上垂直的方向上,从光发发生器产生并施加电动 或磁场改变矿井的运动。

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