A high-density BaTiO 3 -Cu composite film with a BaTiO 3 matrix for embedded capacitors is disclosed. In order to improve the dielectric properties and areal capacitance according to the percolation theory, 0 to 50 wt% of Cu was used as a metal filler of the BaTiO 3 (BT) matrix. A BT-Cu composite film with a thickness of 2 μm was formulated using aerosol deposition at room temperature for use in embedded-film capacitors. The flow conditions of the carrier gas are varied to create very compact composite films without surface craters and internal voids, resulting in relatively high dielectric constant, relatively low dielectric loss, and relatively low leakage current. leakage current) was achieved. The BaTiO 3 -Cu composite film showed a highly dense microstructure and smooth surface, and good dielectric properties were observed when the carrier gas was supplied at 10 L/min. The dielectric constant of the BaTiO 3 -Cu composite film increased with the increase of the Cu content. Although the dielectric loss and leakage current also increased with Cu content, the Cu density in the BaTiO 3 -Cu composite film was within acceptable limits until it reached 40 wt %, and the 40 wt % Cu-containing film was found in previous studies. It exhibited a high areal capacitance, approximately five times the reported values. Additionally, a percolation threshold was observed for composite films with 45 wt % Cu. Despite the advent of the percolation threshold, the BT-Cu composite films all showed low frequency dependence, as the formation of micro-capacitor structures dominated their interior.
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