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Enhancement of dielectric performance upto GHz of the composites with polymer encapsulated hybrid BaTiO3-Cu as fillers : multiple interfacial polarizations playing a key role

机译:以聚合物封装的杂化BaTiO3-Cu作为填料的复合材料的介电性能高达GHz的提高:多种界面极化起关键作用

摘要

Cu nanoparticles with diameters of 15-25 nm were grown discretely on the surface of BaTiO3 (about 100 nm) via a hydrothermal method, and a polyethylene glycol 4000 layer was coated on the surface of the obtained BT-Cu hybrid particles. The PEG layer will serve as a robust interface layer to suppress the mobilization of charge carriers and protect Cu from oxidation. The BT-Cu particles were loaded as fillers in the matrix of polyvinylidene fluoride (PVDF) to fabricate the BT-Cu/PVDF composites. Microstructure and dielectric performance have been investigated. The results showed that the relative permittivity (ϵr) of the composites increased prominently with the loading amount and meanwhile the dielectric loss tangent was suppressed at a low level. For instance, the permittivity of BT-Cu/PVDF with the volume fraction of 53.7% reached 150 with a low loss of 0.16 at 1 kHz. The permittivities maintained high values of over 55 and the dielectric loss was less than 0.05 upto 1 GHz. Investigation on the polarization mechanisms has been conducted and the interfacial polarization between different phases should account for the high dielectric permittivity upto GHz. The energy storage characteristics were also studied.
机译:经由水热法在BaTiO 3(约100nm)的表面上离散地生长直径为15-25nm的Cu纳米颗粒,并且在所获得的BT-Cu杂化颗粒的表面上涂覆聚乙二醇4000层。 PEG层将用作坚固的界面层,以抑制电荷载流子的迁移并保护Cu免受氧化。将BT-Cu颗粒作为填料加载到聚偏二氟乙烯(PVDF)的基质中,以制造BT-Cu / PVDF复合材料。已经研究了微结构和介电性能。结果表明,随着负载量的增加,复合材料的相对介电常数(ϵr)显着增加,同时介电损耗角正切值受到抑制。例如,体积分数为53.7%的BT-Cu / PVDF的介电常数达到150,在1 kHz时损耗低至0.16。介电常数保持在55以上的高值,在1 GHz以下的介电损耗小于0.05。已经对极化机理进行了研究,并且不同相之间的界面极化应说明高达GHz的高介电常数。还研究了能量存储特性。

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