Method and apparatus for converting measurement data of a photolithography mask for EUV band from a first periphery to a second periphery

摘要

The present invention relates to a method for transforming measurement data 640 of a photolithography mask 300 from a first perimeter 150 to a second perimeter 350 for a wavelength range of extreme ultraviolet (EUV). . The method comprises the steps of: (a) determining the measurement data (640) for the photolithography mask (300) of the first periphery (150), the measurement data (640) being applied to the photolithography mask (300) - Affected by the effect of internal stress on ; (b) identifying at least one change (390, 450, 550) of the measurement data (640) during the transition from the first perimeter (150) to the second perimeter (350) - the photolithography the change in the effect of the internal stress on the mask 300 is at least partially compensated for; and (c) calibrating the measurement data (640) determined in step a, with at least one change (390, 450, 550) of the measurement data (640) identified in step b.