A method for correcting critical dimensions using calibrated trim quantities

摘要

The techniques in this specification include a process and system capable of relaxing or correcting a reproducible CD variation pattern to obtain a desired CD through resolution enhancement from a microfabricated patterning process.A reproducible portion of the CD variation is identified across a set of wafers, thereby producing a corrected exposure pattern.The direct projection projection system irradiates this correction pattern onto the substrate as component exposure, extended exposure or partial exposure.Conventional mask based photolithography systems perform primary patterning exposure as a second component or main component exposure.Combining two component exposure improves the resolution of the patterning exposure without measuring each wafer, thereby improving the CD on the substrate to be processed.