SILICON STRUCTURE WITH DIELECTRIC INSULATION FOR HIGH-VOLTAGE MICROSCIRCUITS IN SMALL CASES

摘要

The proposed utility model relates to the design of silicon structures with dielectric insulation for high-voltage microcircuits, namely, for microcircuits in small-sized packages with a supply voltage of more than 200 V.;The technical result of the proposed utility model is to increase the breakdown voltage without increasing the forward voltage drop and crystal thickness.;The specified technical result is achieved by the fact that a silicon structure with dielectric insulation for high-voltage microcircuits, consisting of a silicon-based substrate, isolated by a dielectric from the substrate of silicon monocrystalline pockets with two hidden layers, the first doped with arsenic, and emerging on the working surface of the structure along the side walls of the pockets, the second, at the bottom of the pocket, doped with phosphorus with a dose in the range (2.5-3.5) ⋅10 ¹³ ions / cm ³ and a depth greater than the depth of arsenic by 4-6 microns and a high-voltage planar junction on the working side of a silicon structure with dielectric insulation, consisting from the flat part, along the periphery of which there are elements increasing the breakdown voltage of the planar junction, while the second hidden layer is formed only under the flat part of the planar junction.