3D - DIELECTRIC-METAL STACK FOR 3D FLASH MEMORY APPLICATION

摘要

A method is provided for forming a stack of film layers for use in 3D memory devices. The method begins with providing a substrate to a processing chamber of a deposition reactor. One or more process gases suitable for forming the dielectric layer are then supplied into the processing chamber of the deposition reactor to form the dielectric layer on the substrate. One or more process gases suitable for forming a metallic layer are then supplied into a processing chamber of the deposition reactor to form a metallic layer on the dielectric layer. One or more process gases suitable for forming a metallic nitride adhesion layer are then supplied into a processing chamber of the deposition reactor to form a metal nitride adhesion layer on the metal layer. The sequence is then repeated to form the required number of layers.