METHOD FOR PRODUCING AN ADVANCED SUBSTRATE FOR HYBRID INTEGRATION

摘要

The method comprises the following steps: - providing a receiving substrate (20) and a donating substrate (10) successively comprising: a support substrate (11), a sacrificial layer (12) which can be selectively etched in relation to an active layer (13) and a silicon oxide layer (14) which is arranged on the active layer (13); - forming a cavity in the oxide layer (14) in order to form a first portion (14a) which has a first thickness and a second portion (14b) which has a second thickness greater than the first thickness; filling the cavity with polycrystalline silicon (40) so as to form a surface (41) which is continuous and substantially planar; - assembling the receiving substrate (20) and the donating substrate (10) at the surface (41); eliminating the support substrate (11) while preserving the active layer (13) and the sacrificial layer (12).