NANORIBBON THICK GATE DEVICE WITH HYBRID DIELECTRIC TUNING FOR HIGH BREAKDOWN AND VT MODULATION

摘要

Embodiments disclosed herein include semiconductor devices and methods of forming such semiconductor devices. In an embodiment, a semiconductor device includes a substrate and a first transistor on the substrate. In an embodiment, the first transistor includes a first semiconductor channel on a substrate, a first gate dielectric surrounding the first semiconductor channel, and a first gate electrode on the first gate dielectric. In an embodiment, the semiconductor device further comprises a second transistor on the substrate. In an embodiment, the second transistor comprises a second semiconductor channel on the substrate, a second gate dielectric surrounding the second semiconductor channel, the second gate dielectric being different from the first gate dielectric, and a second gate on the second gate dielectric. and an electrode, wherein the first gate electrode and the second gate electrode comprise the same material.