Etching solution composition for cupper-based metal layer and method for etching cupper-based metal layer using the same

摘要

The present invention relates to the total weight of the composition, A) hydrogen peroxide (H2O2) 1.0 to 13.0% by weight; B) 0.01 to 5.0 wt% of a fluorine-containing compound; C) 0.5 to 10.0% by weight of ethylenediaminetetraacetate; D) 0.1 to 5% by weight of a polyalcohol-type surfactant; and E) an etchant composition for a copper-based metal film, comprising the remaining amount of water, an etching method for a copper-based metal film using the composition, a method for manufacturing an array substrate for a liquid crystal display, and an array substrate for a liquid crystal display do.