Identifying multiple patterning process overlay errors

摘要

A method and system for identifying overlay errors between various patterned features in a design printed on a wafer in a multi-patterning process. With regard to multi-patterning process design, the design for the first patterning process is used as a reference, and the design for the remaining patterning processes is shifted synthetically. Are best globally aligned over the entire image. From the final composite shift of each patterning process design relative to the first patterning process design, a measurement of the relative overlay error between any two of the features printed on the wafer using multi-patterning techniques is determined.