Microelectromechanical building element, process for making a microelectromechanical building element and process for making a system on a chip using a CMOS process

摘要

Microelectromechanical building element (2) having the following characteristics:a base material support (4);a cavity (6) formed in the substrate (4);a movable suspended mass (8) defined in the base material holder substrate by one or more trenches extending from a main surface area (16) of the base material substrate (4) to the cavity (6), the movable suspended mass (8) being configured, to move in a direction parallel to the main surface area of the substrate;a cover structure (10) located on the main surface area (16) of the base material support (8); anda capacity structure (12) having the following characteristics:a first electrode structure (12a) arranged on the movable suspended mass; anda second electrode structure (12b) located on the coating structure, so that the first electrode structure (12a) and the second electrode structure (12b) are perpendicular to the main surface area of the substrate;where the first electrode structure (12a) and the second electrode structure (12b) are arranged above each other in respect of the main surface area of the substrate;where the Capacitive Structure (12) is designed to move the movable suspended mass (8) parallel to the main surface area of the base material semiconductor substrate based on a lateral displacement of the firstTo capture electrode structure (12a) to the second electrode structure (12b) Capacitively.