Capacitance measurement without separation from high power circuits

摘要

Problem to be solved: to provide a method and apparatus for semiconductor processing by plasma assisted processing.This method isA) providing a substrate in each of a plurality of stations;B) according to the RF power parameters configured to reduce variations between stationsThe RF power including the first target frequency is distributed to a plurality of stations;This creates a plasma within the station.C) adjusting the impedance matching circuit for a first station included in a plurality of stations;Distributing RF power to the first stationI) the capacitance of the capacitor of the impedance matching circuitThe impedance matching circuit is measured without separating the capacitor.II) according to the capacitance and RF power parameters measured inBy adjusting the capacitance of the capacitorAdjusting the impedance matching circuitD) performing a semiconductor processing operation on the substrate at each station;.Fig.4