TOTAL-ECTRONIC HALF-LEADERSHIP WITH CONTACT EMENTS AND THEIR MANUFACTURING PROCEDURE

摘要

An optoelectronic semiconductor chip (11) comprises a first semiconductor layer (110) of a first conductivity type, a second semiconductor layer (120) of a second conductivity type, a first and a second current distribution layer (123, 132), and a first and a second contact element (127, 137). The first and second semiconductor layers (110, 120) form a layer stack.The first current distribution layer (123) is situated on a side of the first semiconductor layer (140) facing away from the second semiconductor layer (150) and is electrically conductively connected to the first semiconductor layer (110).The second current distribution layer (132) is situated on the side of the first semiconductor layer (140) facing away from the second semiconductor layer (150) and is electrically conductively connected to the second semiconductor layer (120). The first contact element (127) is connected to the first current distribution layer (123). The second contact element (137) is connected to the second current distribution layer (132). The first or second contact element (127, 137) extends laterally as far as at least one side face (103) of the optoelectronic semiconductor chip (11).