METHOD FOR FORMING A HIGH RESISTIVITY HANDLE SUPPORT FOR A COMPOSITE SUBSTRATE

摘要

The invention relates to a method for forming a high resistivity handle substrate for a composite substrate, the method comprising : - providing a base substrate made of silicon; - exposing the base substrate to a carbon single precursor at a pressure below atmospheric pressure to form a polycrystalline silicon carbide layer of at least 10 nm on the surface of the base substrate; and then - growing a polycrystalline charge trapping layer on the carbon-containing layer.