Forming method of high resistivity handle bracket for composite substrate

摘要

The invention relates to a method for forming a high resistivity processing substrate for a composite substrate, which comprises the following steps:-Providing a silicon substrate;-The substrate is exposed to a single carbon precursor at a pressure lower than atmospheric pressure to form a polycrystalline silicon carbide layer of at least 5 nm on the surface of the substrate; then-Polycrystalline charge trapping layer was grown on the carbon layer.Figure published with abstract: Figure 1