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Spin-transfer torque magnetoresistive memory device with a free layer stack including multiple spacers and methods of making the same
Spin-transfer torque magnetoresistive memory device with a free layer stack including multiple spacers and methods of making the same
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机译:具有自由层堆叠的自旋转移扭矩磁阻存储器件,包括多个间隔物和制造方法
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摘要
A spin-transfer torque (STT) magnetoresistive memory device includes a first electrode, a second electrode, and a magnetic tunnel junction located between the first electrode and the second electrode. The magnetic tunnel junpction includes a reference layer having a fixed magnetization direction, a free layer stack, and a nonmagnetic tunnel barrier layer located between the reference layer and the free layer stack. The free layer stack has a total thickness of less than 2 nm, and contains in order, a proximal ferromagnetic layer located proximal to the nonmagnetic tunnel barrier layer, a first non-magnetic metal sub-monolayer, an intermediate ferromagnetic layer, a second non-magnetic metal sub-monolayer, and a distal ferromagnetic layer.
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