首页>
外国专利>
Magnetic etch stop layer for spin-transfer torque magnetoresistive random access memory magnetic tunnel junction device
Magnetic etch stop layer for spin-transfer torque magnetoresistive random access memory magnetic tunnel junction device
展开▼
机译：用于自旋转移矩磁阻随机存取存储器的磁性隧道结器件的磁性蚀刻停止层
展开▼
页面导航
摘要
著录项
相似文献
摘要
An apparatus includes a capping layer disposed on top of a free layer. The apparatus also includes a magnetic etch stop layer disposed on top of the capping layer. The capping layer and the magnetic etch stop layer are included in a spin-transfer torque magnetoresistive random access memory (STT-MRAM) magnetic tunnel junction (MTJ) device.
展开▼
