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Methods for fabricating artificial neural networks (ANN) based on doped semiconductor resistive random access memory (RRAM) elements
Methods for fabricating artificial neural networks (ANN) based on doped semiconductor resistive random access memory (RRAM) elements
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机译:基于掺杂半导体电阻随机存取存储器(RRAM)元件制造人工神经网络(ANN)的方法
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摘要
A method of forming a resistive random access memory (RRAM) element, the method includes forming a Silicon layer on an oxide layer, depositing a thin film dopant layer on the Silicon layer, and controlling a concentration of the dopant in the thin film dopant layer.
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