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NANOCRYSTALLINE DIAMOND CARBON FILM FOR 3D NAND HARDMASK APPLICATION

机译:用于3D NAND HARDMASK应用的纳米晶金刚石碳膜

摘要

Also disclosed herein are nanocrystalline diamond layers and methods for using them for use in forming semiconductor devices. The device may comprise a substrate having a processing surface and a support surface, a device layer formed on the processing surface, and a nanocrystalline diamond layer formed on the processing layer, wherein the nanocrystalline diamond layer has an average crystal grain size of 2 nm to 5 nm. . The method includes positioning a substrate in a process chamber, depositing a device layer on a processing surface, depositing a nanocrystalline diamond layer on the device layer, the nanocrystalline diamond layer having an average crystal grain size of 2 nm to 5 nm. Steps, patterning and etching the nanocrystalline diamond layer, etching the device layer to form a feature, and ashing the nanocrystalline diamond layer from the surface of the device layer.
机译:本文还公开了纳米晶金刚石层和用于使用它们用于形成半导体器件的方法。该装置可包括具有处理表面和支撑表面的基板,在处理表面上形成的装置层,以及形成在处理层上的纳米晶金刚石层,其中纳米晶金刚石层的平均晶粒尺寸为2nm 5纳米。 。该方法包括将基板定位在处理室中,将器件层沉积在处理表面上,在装置层上沉积纳米晶金刚石层,纳米晶金刚石层的平均晶粒尺寸为2nm至5nm。步骤,图案化和蚀刻纳米晶金刚石层,蚀刻器件层以形成特征,并从器件层的表面缩合纳米晶金刚石层。

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