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Carbon film forming method, carbon film forming apparatus, and storage medium

机译:碳膜形成方法,碳膜形成装置和储存介质

摘要

There is provided a method of forming a carbon film on a workpiece, which includes: loading the workpiece into a process chamber; supplying a gas containing a boron-containing gas into the process chamber to form a seed layer composed of a boron-based thin film on a surface of the workpiece; and subsequently, supplying a hydrocarbon-based carbon source gas and a pyrolysis temperature lowering gas containing a halogen element and which lowers a pyrolysis temperature of the hydrocarbon-based carbon source gas into the process chamber, heating the hydrocarbon-based carbon source gas to a temperature lower than the pyrolysis temperature to pyrolyze the hydrocarbon-based carbon source gas, and forming the carbon film on the workpiece by a thermal CVD.
机译:提供了一种在工件上形成碳膜的方法,其包括:将工件加载到处理室中;将含有含硼气体的气体供应到处理室中以形成由工件表面上的硼基薄膜组成的种子层;随后,供应烃基碳源气体和含有卤素元件的热解温降低气体,并将烃类碳源气体的热解温降低到处理室中,将烃类碳源气体加热到A.温度低于热解温度以热聚烃类碳源气体,并通过热CVD在工件上形成碳膜。

著录项

  • 公开/公告号US11011369B2

    专利类型

  • 公开/公告日2021-05-18

    原文格式PDF

  • 申请/专利权人 TOKYO ELECTRON LIMITED;

    申请/专利号US201715601245

  • 申请日2017-05-22

  • 分类号H01L21/02;H01L21/67;C23C16/02;C23C16/26;C23C16/46;C23C16/52;

  • 国家 US

  • 入库时间 2022-08-24 18:43:07

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