RADIATION DETECTOR, METHOD OF OPERATING RADIATION DETECTOR, AND METHOD OF FABRICATING RADIATION DETECTOR

摘要

A radiation detector having a plurality of pixels is provided. A respective one of the plurality of pixels includes a base substrate(BS); a thin film transistor(TFT) on the base substrate(BS); an insulating layer(IN) on a side of the thin film transistor(TFT) away from the base substrate(BS); a photosensor(PS) on a side of the insulating layer(IN) away from the base substrate(BS); a passivation layer(PVX) on a side of the photosensor(PS) away from the base substrate(BS); a scintillation layer(ST) on a side of the passivation layer(PVX) away from the base substrate(BS); and a reflective layer(RT) on a side of the scintillation layer(ST) away from the base substrate(BS). The photosensor(PS) includes a first polarity layer(PR1) in direct contact with the passivation layer(PVX). All sides of the first polarity layer(PR1) other than a side internal to the photosensor(PS) are entirely in direct contact with the passivation layer(PVX).