首页> 外国专利> Tapered junction shield for self-compensation of asymmetry with increasing aspect ratio for tunneling magneto-resistance (TMR) type read head

Tapered junction shield for self-compensation of asymmetry with increasing aspect ratio for tunneling magneto-resistance (TMR) type read head

机译:用于隧道磁阻(TMR)型读头的纵横比的不对称自补偿锥形结屏蔽

摘要

A junction shield (JS) structure is disclosed for providing longitudinal bias to a free layer (FL) having a width (FLW) and magnetization in a cross-track direction between sidewalls in a sensor. The sensor is formed between bottom and top shields and has sidewalls extending from a front side at an air bearing surface (ABS) to a backside that is a stripe height (SH) from the ABS. The JS structure has a single layer (JS1) adjacent to each sensor sidewall and with a magnetization parallel to that of the FL, and a tapered top surface such that JS1 has decreasing thickness with increasing height from the ABS. As aspect ratio or AR (SH/FLW) increases above 1, longitudinal bias increases proportionally to slow an increase in asymmetry as AR increases, and without introducing a loss in amplitude for a reader with low AR.
机译:公开了一个结屏蔽(JS)结构,用于向传感器中的侧壁之间的横轨方向具有宽度(FLW)和磁化的自由层(FL)提供纵向偏压。传感器形成在底部和顶部屏蔽之间,并且具有从空气支承表面(ABS)的前侧延伸到从ABS的条纹高度(SH)的后侧延伸的侧壁。 JS结构具有与每个传感器侧壁相邻的单层(JS 1 ),并且具有平行于FL的磁化,锥形顶表面,使得JS 1 。从ABS增加高度的厚度降低。由于纵横比或AR(SH / FLW)增加到1,纵向偏置成比例地增加,以减慢不对称的增加,因为AR增加,并且在不引入具有低AR的读取器的幅度的损耗。

著录项

  • 公开/公告号US10991386B2

    专利类型

  • 公开/公告日2021-04-27

    原文格式PDF

  • 申请/专利权人 HEADWAY TECHNOLOGIES INC.;

    申请/专利号US202016908910

  • 发明设计人 URMIMALA ROY;YAN WU;

    申请日2020-06-23

  • 分类号G11B5/39;

  • 国家 US

  • 入库时间 2022-08-24 18:23:17

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