SUPERJUNCTION-SILIZIUM-CARB-HALF-LEATHER PREPARATION AND PROCEDURE FOR THE PRODUCTION OF SUPERJUNCTION-SILIZIUM CARB-HALF-LEATHER PREPARATION

摘要

A superjunction silicon carbide semiconductor includes a silicon carbide semiconductor substrate (1) of a first conductivity type, a first semiconductor layer (2) of the first conductivity type, a parallel pn structure (33),in which alternately epitaxially grown first column areas (31) of the first type of conductivity and ionised second column areas (30) of a second type of conductivity are arranged, a second semiconductor layer (16) of the second type of conductivity, first semiconductor areas (17) of the first type of conductivity, ditches (23),grid electrodes (19) arranged in ditches (23) via grid insulation films (20),and a first electrode (22). The first columns show a concentration of contamination in an area of 1,1 x1016/cm3 to 5,0 x1016/cm3.