首页>
外国专利>
Method and circuits for programming STT-MRAM cells for reducing back-hopping
Method and circuits for programming STT-MRAM cells for reducing back-hopping
展开▼
机译:用于编程STT-MRAM细胞的方法和电路,用于减少背跳
展开▼
页面导航
摘要
著录项
相似文献
摘要
Circuits and methods for programming a MTJ stack of an MRAM cell minimizes a ferromagnetic free layer or pinned layer polarization reversal due to back-hopping. The programming begins by applying a first segment of the segment of the write pulse at a first write voltage level for a first time period to program the MTJ stack. A second segment of the segment of the write pulse at a second write voltage level that is less than the first write voltage level is applied to the magnetic tunnel junction stack for a second time period to correct the polarization of the MTJ when the MTJ stack has reversed polarization during the first time period. The second segment of the segment of the write pulse may be a ramp, or multiple ramps, or have a quiescent period between it and the first segment of the write pulse.
展开▼