UV-ASSISTED STRIPPING OF HARDENED PHOTORESIST TO CREATE CHEMICAL TEMPLATES FOR DIRECTED SELF-ASSEMBLY

摘要

A processing method is disclosed that improves the inductive self-assembly (DSA) processing scheme by allowing the formation of an improved guide strip in a DSA template that enables the formation of sub-30 nm features on a substrate. The improved guide strip can be formed by improving the selectivity of the wet chemistry process between different organic layers and films. In one embodiment, the selectivity may be improved by treating the organic material layer with one or more wavelengths of ultraviolet light. The first wavelength of the ultraviolet light may be less than 200 nm and the second wavelength of the ultraviolet light may be higher than 200 nm.