STANDARD PLAN AND PROCEDURES FOR THE AREA

摘要

An MRAM cell has a lower electrode, a metal tube tube tube passage and an upper electrode. The metal furnace tunnel has a side area between the lower electrode and the upper electrode. A thin layer on the side surface consists of one or more compounds of a metal found in one of the electrodes. The thin layer has a lower conductivity than the MTJ. The electrode metal may have been isolated at the side during the MTJ structuring and subsequently reacted to form a connection,which has a lower conductivity than a nitride of electrode metal. The thin layer may contain an oxide that is separated over the newly separated electrode metal. The thin layer may include a compound of the electrode metal which is separated over the newly separated electrode metal. A silicon nitride buffer can be formed over the thin layer without pictures of nitrides of the electrode metal.