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Method for quantification of process non uniformity using model-based metrology
Method for quantification of process non uniformity using model-based metrology
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机译:使用基于模型的计量来定量过程非均匀性的方法
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摘要
Embodiments of the present invention provide an improved method and system for assessing non-uniformity of features in the measurement area (within the beam spot) on a semiconductor structure, (e.g. wafer), such as a non-uniform film thickness. The scattering from non-uniform features is modeled. Post-processing the residual of theoretical and collected spectra is performed to assess a measure of non-uniformity from within an incident spot beam of a spectrum acquisition tool.
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