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Growth of cubic crystalline phase structure on silicon substrates and devices comprising the cubic crystalline phase structure
Growth of cubic crystalline phase structure on silicon substrates and devices comprising the cubic crystalline phase structure
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机译:硅基板上立方晶相结构的生长及包括立方晶相结构的装置
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摘要
A method of forming a semiconductor structure includes providing a substrate comprising a first material portion and a single crystal silicon layer on the first material portion. The substrate further comprises a major front surface, a major backside surface opposing the major front surface, and a plurality of grooves positioned in the major front surface. A buffer layer is deposited in one or more of the plurality of grooves. A semiconductor material is epitaxially grown over the buffer layer and in the one or more plurality of grooves, the epitaxially grown semiconductor material comprising a hexagonal crystalline phase layer and a cubic crystalline phase structure disposed over the hexagonal crystalline phase.
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