首页> 外国专利> Apparatus, and process for cold spray deposition of thermoelectric semiconductor and other polycrystalline materials and method for making polycrystalline materials for cold spray deposition

Apparatus, and process for cold spray deposition of thermoelectric semiconductor and other polycrystalline materials and method for making polycrystalline materials for cold spray deposition

机译:热电半导体的冷喷涂沉积的装置和其他多晶材料的方法及用于制备冷喷雾沉积的多晶材料的方法

摘要

An apparatus and method perform supersonic cold-spraying to deposit N and P-type thermoelectric semiconductor, and other polycrystalline materials on other materials of varying complex shapes. The process developed has been demonstrated for bismuth and antimony telluride formulations as well as Tetrahedrite type copper sulfosalt materials. Both thick and thin layer thermoelectric semiconductor material is deposited over small or large areas to flat and highly complex shaped surfaces and will therefore help create a far greater application set for thermoelectric generator (TEG) systems. This process when combined with other manufacturing processes allows the total additive manufacturing of complete thermoelectric generator based waste heat recovery systems. The processes also directly apply to both thermoelectric cooler (TEC) systems, thermopile devices, and other polycrystalline functional material applications.
机译:一种装置和方法进行超声波冷喷涂以沉积n和p型热电半导体,以及在其他不同复杂形状的其他材料上的其他多晶材料。已经表现出该过程的铋和锑碲化肽配方以及四赭石型铜磺化材料。厚度和薄层热电半导体材料都沉积在小或大面积上至平坦和高度复杂的形状的表面,因此有助于为热电发电机(TEG)系统产生更大的应用。当与其他制造工艺结合时,该过程允许基于完整的热电发电机的废热回收系统进行总添加剂制造。该过程还可直接适用于热电冷却器(TEC)系统,热电孔装置和其他多晶功能材料应用。

著录项

  • 公开/公告号US10957840B2

    专利类型

  • 公开/公告日2021-03-23

    原文格式PDF

  • 申请/专利权人 RICHARD C THUSS;

    申请/专利号US202016894098

  • 发明设计人 RICHARD C THUSS;

    申请日2020-06-05

  • 分类号H01L35/34;C23C24/04;H01L35/16;H01L35/28;H01L35/14;

  • 国家 US

  • 入库时间 2022-08-24 17:50:24

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