The invention relates to a method for locally removing and / or modifying a polymer material on a surface (WO) of a wafer (W), comprising the steps: a) aligning a mask (2) with respect to the surface (WO); b) local exposure of the Surface (WO) through the mask (2) by means of a VUV light source (3), a gas mixture containing at least oxygen (02) being supplied at the same time; c) flushing of the surface (WO) with a gas mixture containing at least nitrogen (N2 ) and oxygen (02), the VUV light source (3) being switched off; d) repeating at least steps b) and c) until the removal and / or modification of the polymer material is complete. The invention also relates to a device for local removal and / or modifying a polymer material (P) on a surface (WO) of a wafer (W), having a mask (2) which can be aligned in a defined manner with respect to the surface (WO), with one being arranged above the mask eten VUV light source (3) the surface (WO) can be exposed, a gas mixture containing at least nitrogen (N2) and / or oxygen (02) being introduced into a space between the wafer (W) and the mask (2) is. The essence of the invention is that the device has an adjustable wafer table (1) for holding the wafer (W) and is set up to set an exposure gap GE and in a first operating state between the wafer (W) and the mask (2) in a second operating state between the wafer (W) and the mask (2) to set a rinsing gap (GP) which is larger than the exposure gap (GE).
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