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SEQUENTIAL INFILTRATION SYNTHESIS EXTREME ULTRAVIOLET SINGLE EXPOSE PATTERNING
SEQUENTIAL INFILTRATION SYNTHESIS EXTREME ULTRAVIOLET SINGLE EXPOSE PATTERNING
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机译:顺序浸润合成极端紫外线单曝光图案
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摘要
A method includes depositing a resist layer onto a hard mask layer to form a multi-layer patterning material film stack on a semiconductor substrate, directing patterning radiation onto the film stack to form a developed pattern in the resist layer and exposing the film stack to at least one gas precursor in connection with a sequential infiltration synthesis process. The film stack is configured to facilitate selective infiltration of the at least one gas precursor into the resist layer.
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