METHOD FOR PRODUCING AN ATOM TRAP, AND ATOM TRAP

摘要

The invention relates to a method for producing an atom trap (20), having the steps of: (a) applying an electrically conductive starting layer (2) onto a substrate (1), (b) applying at least one electric conductor element (4) onto the starting layer (2) by means of an electrochemical deposition process and/or a lift-off method, (c) applying at least one contacting element (6) by means of an electrochemical deposition process and/or a lift-off method such that the at least one contacting element (6) is connected to the at least one electric conductor element (4) in an electrically conductive manner, (d) removing the starting layer (2) in regions in which the electric conductor element (4) was not applied, (e) applying an insulation layer (7) which at least partly covers the at least one electric conductor element (4) and the at least one contacting element (6), (f) planarizing the insulation layer (7) and exposing the at least one contacting element (6), and (g) applying at least one additional electric conductor element (14) by means of an electrochemical deposition process and/or a lift-off method such that the at least one additional electric conductor element (14) is connected to the at least one contacting element (6) in an electrically conductive manner.