首页> 外国专利> DOPED BULK ACOUSTIC WAVE (BAW) RESONATOR STRUCTURES, DEVICES AND SYSTEMS

DOPED BULK ACOUSTIC WAVE (BAW) RESONATOR STRUCTURES, DEVICES AND SYSTEMS

机译:掺杂散装声波(BAW)谐振器结构,装置和系统

摘要

Techniques for improving Bulk Acoustic Wave (BAW) resonator structures are disclosed, including filters, oscillators and systems that may include such devices. A first layer of doped piezoelectric layer material and a second layer of piezoelectric material may be acoustically coupled with one another to have a piezoelectrically excitable resonance mode. The first layer of doped piezoelectric material may have a first piezoelectric axis orientation, and the second layer of piezoelectric material may have a second piezoelectric axis orientation that substantially opposes the first piezoelectric axis orientation of the first layer of piezoelectric material. An acoustic reflector including a first pair of metal electrode layers may be electrically and acoustically coupled with the first layer of doped piezoelectric material and the second layer of piezoelectric material to excite the piezoelectrically excitable main resonance mode at a resonant frequency.
机译:公开了用于改善散装声波(BAW)谐振器结构的技术,包括可包括这种装置的滤波器,振荡器和系统。第一层掺杂的压电层材料和第二层压电材料可以彼此声学耦合,以具有压电激发谐振模式。第一掺杂压电材料层可以具有第一压电轴取向,第二层压电材料层可以具有第二压电轴取向,其基本上与第一压电材料的第一压电轴取向相对。包括第一对金属电极层的声反射器可以与第一层的掺杂压电材料和第二压电材料层和第二层的电压耦合,以激发压电激发的主谐振模式以谐振频率。

著录项

  • 公开/公告号WO2021021730A3

    专利类型

  • 公开/公告日2021-03-11

    原文格式PDF

  • 申请/专利权人 QXONIX INC.;

    申请/专利号WO2020US43730

  • 申请日2020-07-27

  • 分类号B81B7/02;H03H9/02;H03H9/13;H03H9/15;H03H9/17;H03H9/54;

  • 国家 US

  • 入库时间 2022-08-24 17:41:52

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