Determination of the tilt angle in patterned arrays of high aspect ratio structures

摘要

Methods and apparatus are provided herein for characterizing high aspect ratio (HAR) structures of fabricated or partially fabricated semiconductor devices. The methods involve using small angle X-ray scattering (SAXS) to determine the average parameters of the array of HAR structures. In some implementations, SAXS is used to analyze the symmetry of HAR structures in a sample and may be referred to as TSSA-SAXS (tilted structural symmetry analysis-SAXS) or TSSA. Analysis of parameters such as tilting, sidewall angle, bowing, and the presence of a plurality of tilting in HAR structures may be performed.