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Apparatus and method for producing single crystal

机译:制造单晶的装置和方法

摘要

Problem to be solved: to provide a single crystal manufacturing apparatus capable of maintaining an appropriate growth shape of a single crystal by uniformizing the temperature distribution in the radial direction of a seed crystal or a single crystal grown on the crystal during the crystal growth.Single crystal manufacturing apparatus 100 of the present inventionCrucible 1 consisting of a crucible body 1a and a lid partThe heat insulating member 2 disposed on the upper surface 1BA of the lid part 1b andEquipped withOn the inner surface 1b of the lidA pedestal 1BD for the seed crystal s is installedAdiabatic memberA central through hole 2a arranged at a position which overlaps the pedestal 1BD in plan view from the upper surface 1BA side of the lid part 1b andIt has a heat extraction portion 2B disposed so as to surround the central through hole 2a in plan view.Diagram
机译:要解决的问题:提供一种能够通过在晶体生长期间在晶体生长期间均匀地生长在晶体的径向中的温度分布或在晶体生长期间生长在晶体上生长的单晶的温度分布来保持单晶的单晶制造装置。本发明的单晶制造装置100由坩埚主体1a和盖子部分组成,隔热构件2设置在盖部1b的上表面1ba上,并且在盖子基座1bd的内表面1b上以用于种子晶体的内表面1b S是布置在从盖部1b的上表面1ba侧的平面图中与平面图中的基座1bd重叠的位置处的安装层的孔2a,其具有设置成的热萃取部分2b,以便在平面中围绕中心通孔2a。 view.diagram.

著录项

  • 公开/公告号JP2021038129A

    专利类型

  • 公开/公告日2021-03-11

    原文格式PDF

  • 申请/专利权人 昭和電工株式会社;

    申请/专利号JP20200104635

  • 发明设计人 横田 貴之;

    申请日2020-06-17

  • 分类号C30B23/06;C30B29/36;

  • 国家 JP

  • 入库时间 2022-08-24 17:40:24

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