A method of crushing or generating a crack of a semiconductor raw material capable of suppressing contamination from an electrode material accompanying application of a high voltage pulse, and a method of producing a lump of semiconductor raw material are provided. In a method of crushing a semiconductor raw material by applying a high voltage pulse to a semiconductor raw material disposed in a liquid or generating a crack in a semiconductor raw material, a new fluid is directed toward at least one of a portion to which a high voltage pulse is applied or a peripheral portion of an electrode portion. Is supplied, and a new fluid and a part of the liquid are sucked and discharged from the liquid.
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