The present invention relates to an integrated F-gas treatment system, wherein HF, HCl and dust in exhaust gas are firstly removed through a pretreatment means, and CF4, C2F6, NF3, SF6, etc. discharged from a semiconductor process through a catalytic reaction means. HF gas is generated by reducing the same various F-gas gases, and by removing the HF gas through post-treatment means, the F-gas in the exhaust gas can be completely removed, and a heat exchanger is further provided to bring the HF gas to a high temperature. It relates to an F-gas integrated treatment system that prevents corrosion of the catalytic reactor by suppressing the generation of condensate by allowing it to be discharged from the catalytic reactor.
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