首页> 外国专利> COMPOUND CONTAINING PHENOLIC HYDROXY GROUP, PHOTOSENSITIVE COMPOSITION, COMPOSITION FOR RESISTS, RESIST COATING FILM, CURABLE COMPOSITION, COMPOSITION FOR RESIST UNDERLAYER FILMS, AND RESIST UNDERLAYER FILM

COMPOUND CONTAINING PHENOLIC HYDROXY GROUP, PHOTOSENSITIVE COMPOSITION, COMPOSITION FOR RESISTS, RESIST COATING FILM, CURABLE COMPOSITION, COMPOSITION FOR RESIST UNDERLAYER FILMS, AND RESIST UNDERLAYER FILM

机译:含酚羟基,光敏组合物,用于抗蚀剂的组合物,抗蚀剂涂膜,可固化组合物,用于抗蚀剂底层膜的组合物,抵抗底层膜

摘要

Provides a phenolic hydroxyl group-containing compound excellent in heat resistance, a resist composition excellent in thermal decomposition resistance, photosensitivity and resolution, and a composition for a resist underlayer film excellent in thermal decomposition resistance and dry etching resistance. The following structural formula (1) (In the formula, R 1 is a hydrogen atom, an alkyl group, or an aryl group, and n is an integer of 2 to 10. R 2 is any one of an alkyl group, an alkoxy group, an aryl group, an aralkyl group, and a halogen atom, and m is 0 to It is an integer of 4. When m is 2 or more, a plurality of R 2 may each be the same or different, and may be bonded to either of the two aromatic rings of the naphthylene skeleton. Phenolic hydroxyl group-containing compounds.
机译:提供耐热性优异的含酚羟基的化合物,抗蚀剂组合物具有优异的热分解性,光敏性和分辨率,以及用于热分解抗性和干蚀刻性优异的抗蚀剂底层膜的组合物。以下结构式(1)(在式中,R 1 是氢原子,烷基或芳基,N是2至10的整数.r 2 是烷基,烷氧基,芳基,芳烷基和卤素原子中的任何一种,m是0的,是4的整数。当m是2或更大时,多个r 2 可以各自相同或不同,并且可以与萘二甲骨架的两个芳环中的任一种键合。含酚羟基的化合物。

著录项

  • 公开/公告号KR102222658B1

    专利类型

  • 公开/公告日2021-03-05

    原文格式PDF

  • 申请/专利权人

    申请/专利号KR1020157032069

  • 申请日2014-06-12

  • 分类号C07C39/17;C07C39/14;G03F7/004;G03F7/022;G03F7/023;G03F7/09;G03F7/11;

  • 国家 KR

  • 入库时间 2024-06-14 21:21:27

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