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control method of performance boosting of semiconductor device and semiconductor device performing the same

机译:半导体器件和半导体器件的性能升压控制方法

摘要

In the method for controlling performance boosting of a semiconductor device according to embodiments of the present invention, a user input is monitored, and a plurality of macros related to each of a plurality of macros are The performance of the semiconductor device is boosted by sequentially executing the boosting policies of. The plurality of boosting policies include at least a first boosting policy and a second boosting policy that are sequentially performed. Therefore, it is possible to efficiently perform performance boosting while reducing energy consumption.
机译:在根据本发明实施例的用于控制半导体器件的性能升高的方法中,监视用户输入,并且与多个宏中的每一个相关的多个宏是通过顺序执行来升压半导体器件的性能提高政策。多个升压策略包括至少第一升压策略和顺序执行的第二升压策略。因此,可以有效地执行性能提升,同时降低能量消耗。

著录项

  • 公开/公告号KR20210022850A

    专利类型

  • 公开/公告日2021-03-04

    原文格式PDF

  • 申请/专利权人 삼성전자주식회사;

    申请/专利号KR1020190102097

  • 发明设计人 김상규;박종래;강현주;김정욱;

    申请日2019-08-21

  • 分类号G06F11/34;

  • 国家 KR

  • 入库时间 2022-08-24 17:32:01

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