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Vapor deposition equipment

机译:气相沉积设备

摘要

PROBLEM TO BE SOLVED: To improve uniformity in both film thickness and composition distribution by improving a supply method of Group III and dopant materials. SOLUTION: If a material having a steep deposition rate curve is introduced from near the substrate, and conversely, a material having a gentle pattern is introduced from a distance from the substrate, the difference in deposition rate patterns cancels each other out. Then, the materials of the elements having different deposition rate curves are introduced from different gas introduction paths so that the distribution of the film thickness and the composition becomes uniform. In addition, by optimizing the total flow rate for the gases of different component elements and providing an introduction path for the adjusting gas between the gas introduction paths for the component elements, the distribution can be made uniform in terms of both film thickness and composition. be able to. [Selection diagram] Fig. 1
机译:要解决的问题:通过改善III组和掺杂剂材料的供应方法,提高两种膜厚度和成分分布的均匀性。解决方案:如果从基板附近引入具有陡峭沉积速率曲线的材料,并且相反地,从距基板的距离引入具有温和图案的材料,沉积速度图案的差异彼此抵消。然后,从不同的气体引入路径引入具有不同沉积速率曲线的元件的材料,使得膜厚度和组合物的分布变得均匀。另外,通过优化不同部件元件的气体的总流量,并提供用于部件元件的气体引入路径之间的调节气体的引入路径,可以在膜厚度和组合物方面使分布均匀。能够。 [选择图]图1

著录项

  • 公开/公告号JP2021034675A

    专利类型

  • 公开/公告日2021-03-01

    原文格式PDF

  • 申请/专利权人 漢民科技股▲分▼有限公司;

    申请/专利号JP20190156396

  • 发明设计人 須田 昇;

    申请日2019-08-29

  • 分类号H01L21/205;C23C16/455;C30B29/38;C30B35;

  • 国家 JP

  • 入库时间 2022-08-24 17:24:45

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