A method of making a semiconductor device with several by means of turns between zones of different conduction types

公开/公告号DE1039646B

专利类型

公开/公告日1958-09-25

原文格式PDF

申请/专利号DE1953S035943

申请日1953-10-19

分类号C30B33/00;H01L21/00;H01L21/18;H01L21/24;H01L21/302;H01L29/00;H01L29/06;H01L29/423;H01L29/74;H01L31/10;

国家 DE

入库时间 2022-08-23 20:37:45