The preparation of compounds of elements of groups iii - beta, and v - beta of the periodic table, more particularly of the gallium, indium, arsenic and phosphorus

摘要

Aiii Bv compounds are prepared by reaction in the gaseous phase, e.g. at a pressure of 0.1 micron to 7,500 mm. Hg., of a volatile compound of an element of Group IIIb having an atomic number of at least 13, with an element or mixture of elements of Group Vb and hydrogen, at e.g. 600-1300 DEG C. and in the absence of oxidizing gases. The volatile compound of Group IIIb which may be present in mol fraction 0.01-0.15, may be a halide, alkyl or alkyl halide while the element of Group Vb may be present in quantities 0.05-0.50 mol fraction. The mol fraction of the Group Vb element is at least equal to the mol fraction of the compound of Group IIIb but preferably greater, e.g. double. The Aiii Bv compounds may be the nitrides, phosphides, arsenides and antimonides of Al, Ga and In but bismuthides and Tl compounds may also be made. Ternary and quaternary compounds such as GaAsxP1- x and GayIn1- yAsxP1- x are also possible where x and y are 1-0. Compounds of specified conductivity type and resistivity may be made by using ultra pure starting materials and adding to these or the hydrogen stream, trace amounts of impurities e.g. 1015 to 5.1020 atoms impurity per c.c. of product, such as Be, Mg, Zn, Cd, Hg, or compounds thereof for p-type conductivity or S, Se, Te, Sn, or SnCl4 for n-type conductivity. In specific embodiments GaP, InAs, AlAs, InP, Zn-doped GaAs, Sn-doped AlSb, Zn-doped GaPAs, Te-doped GaIn-AsP.ALSO:AIIIBV compounds are prepared by reaction in the gaseous phase, e.g. at a pressure of 0.1 micron to 7500 mm. Hg, of a volatile compound of an element of Group 111B having an atomic member of at least 13, with an element or mixture of elements of Group VB and hydrogen, at, e.g., 600-1300 DEG C. and in the absence of oxidizing gases. The volatile compound of Group 111B which may be present in mol. fraction 0.01 to 0.15, may be a halide, alkyl or alkyl halide while the element of Group VB may be present in quantities 0.05 to 0.50 mol. fraction. The mol. fraction of the Group VB element is at least equal to the mol. fraction of the compound of Group 111B but preferably greater, e.g. double. The AIIIBV compounds may be the nitrides, phosphides, arsenides and antimonides of Al, Ga and In but bismuthides and Tl compounds may also be made. Ternary and quaternary compounds such as GaAsxP1- x and GayIn1- yAsxP1- x are also possible where x and y are 1 to 0. Compounds of specified conductivity type and resistivity may be made by using ultra pure starting materials and adding to these or the hydrogen stream, trace amounts of impurities, e.g. 1015 to 5.1020 atoms impurity per c.c. of product, such as Be, Mg, Zn, Cd, Hg or compounds thereof for P-type conductivity or S, Se, Te, Sn, or SnCl4 for N-type conductivity. In specific embodiments GaP, InAs, AlAs, InP, Zn-doped GaAs, Sn-doped AlSb, Zn-doped GaPAs, Te-doped GaInAsP.