device for mounting in a deposition of semiconductor material from the gas phase to stabfoermigen traegern from semiconductor material structure and method of manufacturing the same

摘要

PICT:0983322/C1/1 The carbon holders, used to support the ends of a longitudinally extending carrier of a semi-conducting material, are given a compact coating of an ultra-pure element of Group IV having atomic weight less than 80, e.g. C, Si, or Ge. The coating is stated to prevent the absorption in the carbon holder of, e.g. traces of phosphorus, which impair the properties of the semi-conductor carrier. The apparatus of the type described in Specification 861,135 comprises a quartz dome 4 mounted on a water-cooled base 5, housing two semi-conductor elements 2, 3 supported in the carbon holders 11, 12. These are connected to a power source, whereby the carriers and bridging piece 6 are electrically heated. Carbon is deposited on the holders by admitting through a tube 13 a mixture of pure hydrocarbons (cyclohexane, benzene) and N, by which cracked products are formed and pure C is deposited. Alternatively, Si or Ge are deposited from a mixture of hydrogen and their halide compounds, e.g. SiCl4 or silico-chloroform using a temperature of 1,100 DEG to 1,200 DEG C. for Si and 850 DEG C. for Ge. German Specification 865,160 also is referred to.ALSO:The carbon holders, used to support the ends of longitudinally extending carriers of semiconducting material, are given a compact coating of an ultra-pure element of Group IV of atomic weight less than 80, e.g. C, Si or Ge. The coating prevents absorption in the carbon holder of, e.g., traces of phosphorus, which impair the properties of the semi-conductor carrier. The apparatus of the kind described in Specification 861,135 comprises a quartz dome mounted on a water-cooled base 5, housing two semi-conductor elements 2, 3 supported in the carbon holders 11, 12 which are connected PICT:0983322/C6-C7/1 through tubes 7 and 8 (the latter insulated from the base) to a power source, whereby the elements 2, 3 and bridging piece 6 are electrically heated. The holders may be coated with ultra-pure carbon by passing in through tube 13 hydrocarbons and N, by which cracked products including pure C are formed and the latter coated on the holder. Alternatively Si or Ge may be deposited from their halide compounds and hydrogen, at a temperature of 1100-1200 DEG C. for Si, and 850 DEG C. for Ge. German Specification 865,160 also is referred to.