Threshold circuit employing negative resistance diode and device having particular volt-ampere characteristic

• 1. 具有稳定阈值电阻转变特性的材料以及动态随机存储器件 [P] . 中国专利： CN105932154B . 2018.10.09
• 2. 具有稳定阈值电阻转变特性的材料以及动态随机存储器件 [P] . 中国专利： CN105932154A . 2016-09-07
• 3. Multistable circuit employing devices in cascade connection to produce a composite voltage-current characteristic with a plurality of negative resistance regions [P] . 美国专利： US3089039A . 1963-05-07

  机译： 多级电路，采用级联连接的器件来产生具有多个负电阻区域的复合电压-电流特性

• 4. Circuits of the monostable and bistable type employing transistors and negative resistance diodes [P] . 美国专利： US3229113A . 1966-01-11

  机译： 采用晶体管和负阻二极管的单稳态和双稳态类型的电路

• 5. Logic circuits employing transistors and negative resistance diodes [P] . 美国专利： US3175097A . 1965-03-23

  机译： 使用晶体管和负电阻二极管的逻辑电路

• 1. Negative differential resistance behavior in doped C82 molecular devices [J] . XU Hui, JIA Shu-ting, CHEN Ling-na 中南大学学报（英文版） . 2012,第002期
• 2. Negative Resistance and Its Impact on a RC-DC Driven Electric Circuit [J] . Haiduke Sarafian 电磁分析与应用期刊（英文） . 2021,第007期
• 3. Device Physics Research for Submicron and Deep Submicron Space Microelectronics Devices and Integrated Circuits [J] . 系统工程与电子技术：英文版 . 1992,第004期
• 4. ORGANIC NEGATIVE RESISTANCE DEVICE USING PPV CONTAINING ELECTRON TRANSPORTING GROUP ON THE MAIN CHAIN [J] . XinhuaXU, ShougenYIN, 等 中国反应性高分子：英文版 . 2000,第f05期
• 5. A threshold voltage independent floating resistor circuit exthibiting both positive and negative resistance values [C] . Oura, T., Yoneyama, . 2002
• 6. NEGATIVE DIFFERENTIAL RESISTANCE IN TRANSISTOR CIRCUITS (NONLINEAR, DEVICES, COMPOUND, SCR MODELING, RESISTIVE MULTIPORTS). [D] . TRAJKOVIC, LJILJANA. 1986
• 7. Characteristic Fluctuations of Dynamic Power Delay Induced by Random Nanosized Titanium Nitride Grains and the Aspect Ratio Effect of Gate-All-Around Nanowire CMOS Devices and Circuits [O] . Yiming Li, Chieh-Yang Chen, Min-Hui Chuang, 2019
• 8. Performance characteristics of modular nanosecond circuitry employing tunnel diodes / [O] . Madison, J. M., McConnell, J. W., Scroggs, R. J., 1964

• 1. Negative differential resistance behavior in doped C82 molecular devices [J] . 徐慧 ,贾姝婷 ,陈灵娜 . 中南大学学报 . 2012,第002期
• 2. 具有晶体二极管2CP25特性的非线性电阻电阻率的计算 [C] . 张焕明 ,李强 . 中国电子学会电路与系统学会第十四届年会 . 1998
• 3. 分子器件负微分电阻效应和整流效应的理论研究 [A] . 范志强 . 2010